The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Oct. 22, 2015
International Business Machines Corporation, Armonk, NY (US);
Bruce B. Doris, Slingerlands, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Darsen D. Lu, Mount Kisco, NY (US);
Philip J. Oldiges, Lagrangeville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Techniques for producing radiation tolerant device structures are provided. In one aspect, a method for forming a radiation-hardened device includes the steps of: forming fin masks on a SOI layer of an SOI wafer, wherein the SOI wafer includes the SOI layer separated from a substrate by a buried insulator; patterning fins in the SOI layer using the fin masks; and implanting at least one dopant into exposed portions of the buried insulator between the fins to increase a radiation hardness of the device structure by providing a path in the buried insulator for charge to dissipate, wherein the fin masks are left in place during the implanting step to prevent damage to the fins. Implementations with a bulk substrate, as well as the resulting devices, are also provided.