The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Oct. 20, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Chih Chen, Tainan, TW;
Hung-Lung Hu, Tainan, TW;
Chia-Ching Tsai, Tainan, TW;
Szu-Hung Yang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device with metal-doped etch stop layer therein and a method of manufacturing the same is disclosed. The method includes forming an semiconductor device with a interconnect structure that has a dielectric layer and a conductor therein, and an etch stop layer over the dielectric layer; applying a photo resist layer and patterning the photo resist layer to expose a portion of the etch stop layer on a top surface of the conductor over of the dielectric layer; and doping the exposed portion of the etch stop layer with an element to form a metal-doped etch stop layer. The formed metal-doped etch stop layer has a recess structure and functions as a conductive pad over the conductor.