The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Nov. 04, 2011
Kazuhiko Kusunoki, Tokyo, JP;
Kazuhito Kamei, Tokyo, JP;
Nobuyoshi Yashiro, Tokyo, JP;
Kouji Moriguchi, Tokyo, JP;
Nobuhiro Okada, Tokyo, JP;
Katsunori Danno, Susono, JP;
Hironori Daikoku, Susono, JP;
Kazuhiko Kusunoki, Tokyo, JP;
Kazuhito Kamei, Tokyo, JP;
Nobuyoshi Yashiro, Tokyo, JP;
Kouji Moriguchi, Tokyo, JP;
Nobuhiro Okada, Tokyo, JP;
Katsunori Danno, Susono, JP;
Hironori Daikoku, Susono, JP;
NIPPON STEEL & SUMITOMO METAL CORPORATION, Tokyo, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Aichi-ken, JP;
Abstract
A method for manufacturing an n-type SiC single crystal, enables the suppression of the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method includes the steps of: providing a manufacturing apparatus () including a chamber () having an area in which a crucible () is to be disposed; heating the area in which the crucible () is to be disposed and evacuating the gas in the chamber (); filling, after the evacuation, the chamber () with a mixed gas containing a noble gas and nitrogen gas; heating and melting a starting material housed in the crucible () disposed in the area to produce a SiC solution () containing silicon and carbon; and immersing a SiC seed crystal into the SiC solution under the mixed gas atmosphere to grow an n-type SiC single crystal on the SiC seed crystal.