The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Oct. 28, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventor:
Wen-Tai Lu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/2652 (2013.01); H01L 21/26586 (2013.01); H01L 29/0653 (2013.01); H01L 29/66803 (2013.01); H01L 29/66818 (2013.01); H01L 29/7853 (2013.01); H01L 29/7854 (2013.01);
Abstract
A method includes oxidizing a semiconductor fin to form an oxide layer on opposite sidewalls of the semiconductor fin. The semiconductor fin is over a top surface of an isolation region. After the oxidizing, a tilt implantation is performed to implant an impurity into the semiconductor fin. The oxide layer is removed after the tilt implantation.