The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jun. 27, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Ji Xu, Watervliet, NY (US);
Richard A. Farrell, Albany, NY (US);
Gerard M. Schmid, Rensselaer, NY (US);
Moshe E Preil, Sunnyvale, CA (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); G03F 7/00 (2006.01); H01L 21/311 (2006.01); C08L 53/00 (2006.01); G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/0271 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/28123 (2013.01); H01L 21/308 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/76816 (2013.01); B81C 2201/0198 (2013.01); C08L 53/00 (2013.01); C08L 53/005 (2013.01); G03F 1/00 (2013.01); G03F 7/0002 (2013.01); H01L 21/31144 (2013.01);
Abstract
In one example, a method includes forming a template having a plurality of elements above a process layer and forming spacers on sidewalls of the plurality of elements. Portions of the process layer are exposed between adjacent spacers. At least one of the plurality of elements is removed. A mask structure is formed from a directed self-assembly material over the exposed portions. The process layer is patterned using at least the mask structure as an etch mask.