The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jan. 21, 2015
Qualcomm Incorporated, San Diego, CA (US);
Xia Li, San Diego, CA (US);
Jeffrey Junhao Xu, San Diego, CA (US);
Xiao Lu, San Diego, CA (US);
Matthew Michael Nowak, San Diego, CA (US);
Seung Hyuk Kang, San Diego, CA (US);
Xiaonan Chen, San Diego, CA (US);
Zhongze Wang, San Diego, CA (US);
Yu Lu, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An apparatus includes a multiple time programmable (MTP) memory device. The MTP memory device includes a metal gate, a substrate material, and an oxide structure between the metal gate and the substrate material. The oxide structure includes a hafnium oxide layer and a silicon dioxide layer. The hafnium oxide layer is in contact with the metal gate and in contact with the silicon dioxide layer. The silicon dioxide layer is in contact with the substrate material. The MTP device includes a transistor, and a non-volatile state of the MTP memory device is based on a threshold voltage of the transistor.