The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Aug. 12, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Yi-Ting Wang, Zhubei, TW;
Chia-Ying Lin, Tainan, TW;
Run-Ci Gao, Hukuo Township, TW;
Hung-Han Lin, Hsinchu, TW;
Chia-Chi Ho, Zhudong Township, TW;
Chung-Shi Chiang, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
One or more circuit arrangements and techniques for modeling are provided. In some embodiments, a circuit arrangement includes at least one of a first current source, a second current source, a first diode, a second diode, and a switching component. In some embodiments, the switching component includes a bipolar junction transistor (BJT). In some embodiments, the circuit arrangement is integrated into a metal oxide semiconductor (MOS) device. When the circuit arrangement is integrated into a MOS device, at least one of a substrate current leakage, a junction breakdown, or a diode reverse recovery (DRR) effect is predictable for the MOS device.