The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Nov. 08, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yu-Hsiang Hung, Tainan, TW;

Chung-Fu Chang, Tainan, TW;

Chia-Jong Liu, Ping-Tung County, TW;

Yen-Liang Wu, Taipei, TW;

Pei-Yu Chou, Tainan, TW;

Home-Been Cheng, Keelung, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 21/225 (2006.01); H01L 21/311 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66553 (2013.01); H01L 21/2253 (2013.01); H01L 21/31133 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/1054 (2013.01); H01L 29/41775 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01); H01L 29/7834 (2013.01); H01L 29/7847 (2013.01); H01L 29/7848 (2013.01); H01L 29/165 (2013.01); H01L 29/665 (2013.01); H01L 29/66545 (2013.01);
Abstract

A method of manufacturing a semiconductor device including the steps of providing a substrate having first type semiconductor regions and second type semiconductor regions, forming a conformal first epitaxy mask layer on the substrate, forming first type epitaxial layer in the substrate of the first type semiconductor regions, forming a conformal second epitaxy mask layer on the substrate, forming second type epitaxial layer in the substrate of the second type semiconductor regions, and removing the second epitaxy mask layer.


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