The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

May. 09, 2013
Applicant:

Nepes Co., Ltd., Eumseong-gun, Chungcheongbuk-do, KR;

Inventors:

Yong-Tae Kwon, Suwon-si, KR;

Kyung-Hoon Park, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 25/10 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 25/105 (2013.01); H01L 21/56 (2013.01); H01L 21/568 (2013.01); H01L 23/3107 (2013.01); H01L 23/49827 (2013.01); H01L 23/5389 (2013.01); H01L 24/08 (2013.01); H01L 24/19 (2013.01); H01L 24/24 (2013.01); H01L 24/32 (2013.01); H01L 24/82 (2013.01); H01L 24/83 (2013.01); H01L 24/89 (2013.01); H01L 25/0655 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/08111 (2013.01); H01L 2224/08235 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/24101 (2013.01); H01L 2224/24155 (2013.01); H01L 2224/32235 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06572 (2013.01); H01L 2225/107 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/171 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18162 (2013.01);
Abstract

Provided is a method of manufacturing a semiconductor package including a through wiring having precision and a low process defect. The semiconductor package includes an insulating substrate including a first through portion and a second through portion; a through wiring which fills the first through portion, and is located to penetrate the insulating substrate; a semiconductor chip which is located in the second through portion, and is electrically connected to the through wiring; a molding member molding the semiconductor chip and the insulating substrate; and a re-wiring pattern layer which is located at a lower side of the insulating substrate, and electrically connects the through wiring and the semiconductor chip.


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