The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Apr. 09, 2015
United Microelectronics Corp., Hsinchu, TW;
Kun-Ju Li, Tainan, TW;
Kuo-Chin Hung, Changhua County, TW;
Po-Cheng Huang, Kaohsiung, TW;
Yu-Ting Li, Chiayi, TW;
Wu-Sian Sie, Tainan, TW;
Chun-Tsen Lu, Tainan, TW;
Wen-Chin Lin, Tainan, TW;
Fu-Shou Tsai, Keelung, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device is provided. A substrate with an insulation formed thereon is provided, wherein the insulation has plural trenches, and the adjacent trenches are spaced apart from each other. A barrier layer is formed on an upper surface of the insulation and in sidewalls of the trenches, and the barrier layer comprises overhung portions corresponding to the trenches. A seed layer is formed on the barrier layer. Then, an upper portion of the seed layer formed on an upper surface of the barrier layer is removed. An upper portion of the barrier layer is removed for exposing the upper surface of the insulation. Afterwards, the conductors are deposited along the seed layer for filling up the trenches, wherein the top surfaces of the conductors are substantially aligned with the upper surface of the insulation.