The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Nov. 04, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ching-Hong Jiang, Hsin-Chu, TW;
Li-Ting Wang, Hsin-Chu, TW;
Teng-Chun Tsai, Hsin-Chu, TW;
Shih-Chiang Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An embodiment method includes forming a nanowire extending upwards from a substrate, wherein the nanowire includes: a bottom semiconductor region; a middle semiconductor region over the bottom semiconductor region; and a top semiconductor region over the middle semiconductor region. The method also includes forming a dielectric layer around and extending over the nanowire and forming a chemical mechanical polish-stop (CMP-stop) layer within the dielectric layer using an implantation process. After forming the CMP-stop layer, the dielectric layer is planarized.