The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Sep. 18, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Zhiqiang Wu, Chubei, TW;
Yi-Ming Sheu, Hsinchu, TW;
Tsung-Hsing Yu, Hsinchu, TW;
Kuan-Lun Cheng, Hsinchu, TW;
Chih-Pin Tsao, Zhubei, TW;
Wen-Yuan Chen, Yangmei, TW;
Chun-Fu Cheng, Changhua, TW;
Chih-Ching Wang, Jinhu Township, TW;
Abstract
A method of forming an integrated circuit comprises forming a first doped region in a substrate using a first angle ion implantation performed on a first side of a gate structure. The gate structure has a length in a first direction and a width in a second direction. The method also comprises forming a second doped region in the substrate using a second angle ion implantation performed on a second side of the gate structure. The first angle ion implantation has a first implantation angle with respect to the second direction and the second angle ion implantation has a second implantation angle with respect to the second direction. Each of the first implantation angle and the second implantation angle is substantially larger than 0° and less than 90°.