The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
May. 29, 2014
Inotera Memories, Inc., Taoyuan County, TW;
Tzung-Han Lee, Taipei, TW;
Yaw-Wen Hu, Taoyuan County, TW;
Neng-Tai Shih, New Taipei, TW;
Heng Hao Hsu, New Taipei, TW;
Yu Jing Chang, Taoyuan County, TW;
Hsu Chiang, New Taipei, TW;
Inotera Memories, Inc., Taoyuan County, TW;
Abstract
A semiconductor electronic device structure includes a substrate having a trench disposed therein, a gate electrode disposed in the trench, and a gate dielectric layer disposed on the surface in the trench. The substrate and the gate electrode are electrically insulated from each other by the gate dielectric layer. The substrate further has a pair of doped areas. The doped areas each are vertically disposed along the two respective lateral sides of the trench. The doped areas each have a first portion and a second portion arranged atop the first portion. The first portion extends vertically to the portion of the substrate that is aligned to the gate electrode. The lateral dimension of the first portion is smaller than the lateral dimension of the second portion, and the doping concentration of the first portion is lighter than the doping concentration of the second portion.