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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9496356 B1

PDFFull Text
Date of Patent:
Nov. 15, 2016

Filed:

Oct. 09, 2015

Under-spacer doping in fin-based semiconductor devices

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Veeraraghavan S. Basker, Schenectady, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Ali Khakifirooz, Mountain View, CA (US);

Charles W. Koburger, III, Delmar, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Vazken Alexanian

Primary Examiner:

Robert Bachner

Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/161 (2006.01); H01L 29/167 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42356 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/167 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A fin field effect transistor (FinFET) device and a method of fabricating the FinFET are described. The device includes a fin formed on a substrate, the fin including a channel region of the device and a spacer and a cap formed over a dummy gate line separating a source and drain of the device. The device also includes an epitaxial layer formed over portions of the fin, the epitaxial layer being included between the fin and the spacer.

Find Patent Forward Citations

Basker, Veeraraghavan. (2016). Under-spacer doping in fin-based semiconductor devices (U.S. Patent No. 9496356). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9496356

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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