The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jul. 18, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/28114 (2013.01); H01L 21/823456 (2013.01); H01L 21/823462 (2013.01); H01L 21/823487 (2013.01); H01L 29/4175 (2013.01); H01L 29/41741 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01);
Abstract
A semiconductor device includes a first transistor and a second transistor. Each of the first and second transistors includes a channel. The channel of the first transistor extends in a substantially vertical direction. The channel of the second transistor extends in a substantially horizontal direction. A method for fabricating the semiconductor device is also disclosed.