The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Dec. 30, 2010
Applicants:
Luying Du, Singapore, SG;
Fan Zhang, Singapore, SG;
Jun Chen, Singapore, SG;
Bei Chao Zhang, Shanghai, CN;
Juan Boon Tan, Singapore, SG;
Inventors:
Luying Du, Singapore, SG;
Fan Zhang, Singapore, SG;
Jun Chen, Singapore, SG;
Bei Chao Zhang, Shanghai, CN;
Juan Boon Tan, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76835 (2013.01); H01L 21/7682 (2013.01); H01L 21/76807 (2013.01); H01L 21/76831 (2013.01); H01L 23/5222 (2013.01); H01L 23/53295 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76849 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Embodiments relate to a method for forming reliable interconnects by preparing a substrate with a dielectric layer, processing the dielectric layer to serve as an IMD layer, wherein the IMD layer comprises a hybrid IMD layer comprising a plurality of dielectric materials with different k values.