The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Aug. 31, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming a hard mask (HM) stack over a material layer, which has a first, second, third and fourth HM layers. The method also includes forming a first trench in the fourth HM layer, forming a first spacer in the first trench, forming a second trench in the fourth HM layer, removing at least a portion of the first spacer to form a cut by using the third HM layer as an etch-stop layer, removing a portion of the third HM layer and the second HM layer exposed by the first trench, second trench, and cut to form an extended first trench, extended second trench, and extended cut, respectively. The method also includes forming second spacers in the extended first trench, the extended second trench, and the extended cut and removing another portion of the second HM layer to form a third trench.