The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Sep. 17, 2014
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Yukio Inazuki, Jyoetsu, JP;
Takashi Yoshii, Jyoetsu, JP;
Toyohisa Sakurada, Jyoetsu, JP;
Akira Ikeda, Jyoetsu, JP;
Hideo Kaneko, Jyoetsu, JP;
Satoshi Watanabe, Jyoetsu, JP;
Yoshio Kawai, Jyoetsu, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the silicon-containing inorganic film, comprising: forming the silicon-containing inorganic film such that a surface that will contact the resist film has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent; performing a silylation process after forming the silicon-containing inorganic film; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development.