The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2016

Filed:

Mar. 28, 2014
Applicants:

Liang W. Zhang, Chandler, AZ (US);

Zhihua Zou, Gilbert, AZ (US);

Osborne A. Martin, Iii, Maricopa, AZ (US);

Robert F. Wiedmaier, Phoenix, AZ (US);

Inventors:

Liang W. Zhang, Chandler, AZ (US);

Zhihua Zou, Gilbert, AZ (US);

Osborne A. Martin, III, Maricopa, AZ (US);

Robert F. Wiedmaier, Phoenix, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G01B 11/16 (2006.01); G01L 1/24 (2006.01); G01N 21/88 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01B 11/18 (2013.01); G01L 1/241 (2013.01); G01L 1/248 (2013.01); G01N 21/8806 (2013.01); H01L 22/12 (2013.01);
Abstract

Inspection of microelectronic devices is described using near infrared light. In one example, a dielectric material layer on a substrate is illuminated with a near infrared light beam. The substrate has at least one contact land, the dielectric material layer overlies at least a portion of the contact land, and the substrate has at least one via defined in the dielectric material layer, the via exposing at least a portion of the contact land. Reflected near infrared light is reflected from the substrate at a camera. The position of the via is determined relative to the contact land from the reflected light beam using an image processing device.


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