The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Mar. 16, 2016
Globalfoundries Inc., Grand Cayman, KY;
Ryan Ryoung-han Kim, Albany, NY (US);
Wenhui Wang, San Jose, CA (US);
Lei Sun, Albany, NY (US);
Erik Verduijn, Rensselaer, NY (US);
Yulu Chen, Troy, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, GB;
Abstract
A method for producing self-aligned vias (SAV) is provided. Embodiments include forming a ILOS layer over a dielectric layer; forming pairs of spacers over the ILOS layer, each pair of spacers having a first filler formed between adjacent spacers, and a second filler formed between each pair of spacers; forming and patterning a first OPL to expose one second filler, spacers on opposite sides of the one second filler, and a portion of the first filler adjacent each of the exposed spacers; removing the one second filler to form a SAV, and SAV etching into the ILOS layer; forming a second OPL over the first OPL and in the SAV to form a SAV plug; removing OPL layers and etching into the ILOS layer down to the dielectric layer; forming a third OPL layer in spaces between the TEOS layer; and removing the SAV plug.