The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9484180 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 01, 2016

Filed:

Sep. 03, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Manabu Iwata, Miyagi, JP;

Yasuharu Sasaki, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01J 37/02 (2006.01);
U.S. Cl.
CPC ...
H01J 37/026 (2013.01); H01J 37/32091 (2013.01); H01J 37/32697 (2013.01);
Abstract

A plasma processing apparatus includes a processing chamber; a conductive base within the processing chamber; an electrostatic chuck, having an electrode, provided on the base; a high frequency power supply that applies a high frequency power to the base; a first DC power supply that applies a DC voltage to the electrostatic chuck; and a plasma generation unit that generates plasma of a processing gas within the processing chamber. A plasma processing method performed in the plasma processing apparatus includes connecting the first DC power supply to the electrode of the electrostatic chuck; cutting off connection between the first DC power supply and the electrode of the electrostatic chuck; and generating the plasma within the processing chamber by applying the high frequency power to the base in a state that the connection between the first DC power supply and the electrode of the electrostatic chuck is cut off.


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