The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Oct. 21, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 23/60 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66484 (2013.01); H01L 21/8234 (2013.01); H01L 23/60 (2013.01); H01L 29/78 (2013.01); H01L 2924/0002 (2013.01);
Abstract
The present disclosure provides a semiconductor device having a transistor. The transistor includes a source region, a drain region, and a channel region that are formed in a semiconductor substrate. The channel region is disposed between the source and drain regions. The transistor includes a first gate that is disposed over the channel region. The transistor includes a plurality of second gates that are disposed over the drain region.