The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Mar. 16, 2016
Globalfoundries Inc., Grand Cayman, KY;
Wenhui Wang, San Jose, CA (US);
Ryan Ryoung-han Kim, Albany, NY (US);
Lei Sun, Albany, NY (US);
Erik Verduijn, Rensselaer, NY (US);
Yulu Chen, Troy, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods of forming a SAV using a selective SAQP or SADP process are provided. Embodiments include providing on a TiN layer and dielectric layers alternating mandrels and non-mandrel fillers, spacers therebetween, and a metal cut plug through a mandrel or a non-mandrel filler; removing a non-mandrel filler through a SAV patterning stack having an opening over the non-mandrel filler and adjacent spacers, forming a trench; removing a mandrel through a second SAV patterning stack having an opening over the mandrel and adjacent spacers, forming a second trench; etching the trenches through the TiN and dielectric layers; forming plugs in the trenches; removing the mandrels and non-mandrel fillers, forming third trenches; etching the third trenches through the TiN layer; removing the metal cut plug and spacers and etching the third trenches into the dielectric layer; removing the plugs; and filling the trenches with metal.