The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Jun. 06, 2014
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Hu Kang, Tualatin, OR (US);

Adrien LaVoie, Portland, OR (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); C23C 16/4401 (2013.01); C23C 16/45523 (2013.01); H01J 37/32862 (2013.01);
Abstract

Systems and methods for operating a substrate processing system include processing a substrate arranged on a substrate support in a processing chamber. At least one of precursor gas and/or reactive gas is supplied during the processing. The substrate is removed from the processing chamber. Carrier gas and purge gas are selectively supplied to the processing chamber. RF plasma is generated in the processing chamber during N cycles, where N is an integer greater than one. The RF plasma is on for a first period and off for a second period during each of the N cycles. The purge gas is supplied during at least part of each of the N cycles.


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