The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

Jan. 22, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Troy L. Graves-Abe, Wappingers Falls, NY (US);

Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);

Conal E. Murray, Yorktown Heights, NY (US);

Assignee:

GlobalFoundries, Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); H01L 21/66 (2006.01); H01L 23/48 (2006.01); G01R 31/26 (2014.01); G01M 5/00 (2006.01);
U.S. Cl.
CPC ...
G01R 31/021 (2013.01); G01M 5/0033 (2013.01); G01M 5/0083 (2013.01); G01R 31/26 (2013.01); H01L 22/34 (2013.01); H01L 23/481 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A structure to detect changes in the integrity of vertical electrical connection structures including a semiconductor layer and an electrically conductive material extending through an entire depth of the semiconductor layer. The electrically conductive material has a geometry that encloses a pedestal portion of the semiconductor layer within an interior perimeter of the electrically conductive material. At least one semiconductor device is present on the pedestal portion of the semiconductor layer within the perimeter of the electrically conductive material.


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