The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Feb. 20, 2014
James T. Mcwhirter, San Jose, CA (US);
David Gaines, Livermore, CA (US);
Joseph Lee, Castro Valley, CA (US);
Paulo Zambon, Campbell, CA (US);
James T. McWhirter, San Jose, CA (US);
David Gaines, Livermore, CA (US);
Joseph Lee, Castro Valley, CA (US);
Paulo Zambon, Campbell, CA (US);
Ultratech, Inc., San Jose, CA (US);
Abstract
Systems and methods for performing semiconductor laser annealing using dual loop control are disclosed. The first control loop operates at a first frequency and controls the output of the laser and controls the 1/f laser noise. The second control loop also controls the amount of output power in the laser and operates at second frequency lower than the first frequency. The second control loop measures the thermal emission of the wafer over an area the size of one or more die so that within-die emissivity variations are average out when determining the measured annealing temperature. The measured annealing temperature and an annealing temperature set point are used to generate the control signal for the second control loop.