The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Mar. 25, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Takanobu Hotta, Nirasaki, JP;

Yasushi Aiba, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/76879 (2013.01); H01L 23/53257 (2013.01); H01L 2924/0002 (2013.01);
Abstract

In a tungsten film forming method, a substrate having a recess is provided in a processing chamber, and a first tungsten film is formed on the substrate to fill the recess with a tungsten by simultaneously or alternately supplying WClgas as a tungsten source and a reducing gas under a depressurized atmosphere of the processing chamber, and by reacting the WClgas with the reducing gas while heating the substrate. Then, an opening is formed in the tungsten filled in the recess by supplying WClgas into the processing chamber and etching an upper portion of the tungsten. Thereafter, a second tungsten film is formed on the substrate having the opening by simultaneously or alternately supplying the WClgas and the reducing gas into the processing chamber, and by reacting the WClgas with the reducing gas while heating the substrate.


Find Patent Forward Citations

Loading…