The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Jan. 15, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuan-Chia Chen, Hsinchu, TW;
Shing-Chyang Pan, Jhudong Township, TW;
Chih-Chien Chi, Hsinchu, TW;
Ching-Hua Hsieh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor structure includes forming a dielectric layer overlaying a substrate; forming a trench in the dielectric layer; forming a first barrier layer lining the trench; forming a conductive layer overlaying the first barrier layer; forming a second barrier layer overlaying the conductive layer; forming a metallic sacrificial layer to cover the second barrier layer and to fill the trench; and performing a polishing process to remove the materials above a bottom portion of the second barrier layer.