The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Jan. 30, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zongbin Wang, Singapore, SG;

Shalina Sudheeran, Singapore, SG;

Loke Yuen Wong, Singapore, SG;

Arvind Sundarrajan, Singapore, SG;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02214 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01);
Abstract

Silicon oxide is deposited with improved step coverage by first exposing a patterned substrate to a silicon-containing precursor and then to an oxygen-containing precursor or vice versa. Plasma excitation is used for both precursors. Exposing the precursors one-at-a-time avoids disproportionate deposition of silicon oxide near the opening of a high aspect ratio gap on a patterned substrate. The plasma-excited precursors exhibit a lower sticking coefficient and/or higher surface diffusion rate in regions already adsorbed and therefore end up depositing silicon oxide deep within the high aspect ratio gap to achieve the improvement in step coverage.


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