The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Feb. 13, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Cheng-Hsiung Kuo, Hsinchu County, TW;

Gu-Huan Li, Hsinchu County, TW;

Jih-Chen Wang, Hsinchu, TW;

Chung-Chieh Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 29/00 (2006.01); G11C 7/22 (2006.01); G11C 14/00 (2006.01);
U.S. Cl.
CPC ...
G11C 7/106 (2013.01); G11C 7/22 (2013.01); G11C 29/00 (2013.01); G11C 14/0054 (2013.01); G11C 14/0063 (2013.01);
Abstract

A memory includes a first memory cell, a second memory cell, a latch unit, and a switch unit. The latch unit has a true node and a complement node. The switch unit is responsive to a first control signal and a second control signal, and is configured to connect the first memory cell to the true node and to disconnect the second memory cell from the complement node in response to the first control signal and to connect the second memory cell to the complement node and to disconnect the first memory cell from the true node in response to the second control signal. A semiconductor device that includes the memory is also disclosed. A method for testing the memory is also disclosed.


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