The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
May. 05, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Changjae Yang, Seoul, KR;
Shigenobu Maeda, Gyeonggi-do, KR;
Changhwa Kim, Gyeonggi-do, KR;
Youngmoon Choi, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7853 (2013.01); H01L 29/045 (2013.01);
Abstract
According to an exemplary embodiment of the present embodiment, a semiconductor device is provided as follows. An active fin protrudes from a substrate, extending in a direction. A gate structure crosses a first region of the active fin. A source/drain is disposed on a second region of the active fin. The source/drain includes upper surfaces and vertical side surfaces. The vertical side surfaces are in substantially parallel with side surfaces of the active fin.