The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Oct. 29, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Xunyuan Zhang, Albany, NY (US);

Tibor Bolom, Litomerice, CZ;

Errol Todd Ryan, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01); H01L 23/53233 (2013.01); H01L 23/53266 (2013.01); H01L 2924/0002 (2013.01);
Abstract

One illustrative method disclosed herein includes, among other things, forming an opening in at least one layer of insulating material so as to thereby expose at least a portion of a conductive contact, performing a selective metal silicide formation process to selectively form a metal silicide layer in the opening and on the conductive contact, depositing at least one conductive material above the selectively formed metal silicide layer so as to over-fill the opening, and performing at least one planarization process so as to remove excess materials and thereby define a conductive via that is positioned in the opening and conductively coupled to the selectively formed metal silicide layer and to the conductive contact.


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