The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Feb. 04, 2016
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Shih-Yuan Cheng, Palo Alto, CA (US);
Shenjian Liu, San Ramon, CA (US);
Youn Gi Hong, Fremont, CA (US);
Qian Fu, Pleasanton, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/0271 (2013.01); H01L 21/308 (2013.01); H01L 21/3081 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01);
Abstract
A method for forming lines in an etch layer on a substrate may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a photoresist mask, ionizing the UV producing gas to produce UV rays to irradiate the photoresist mask, and etching the lines into the etch layer through the photoresist mask.
Cheng, Shih-Yuan. (2016). Line width roughness improvement with noble gas plasma (U.S. Patent No. 9466502). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9466502
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile