The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Sep. 21, 2015
United Microelectronics Corp., Hsinchu, TW;
Kun-Ju Li, Tainan, TW;
Yu-Ting Li, Chiayi, TW;
Po-Cheng Huang, Kaohsiung, TW;
Fu-Shou Tsai, Keelung, TW;
Wu-Sian Sie, Tainan, TW;
I-Lun Hung, Tainan, TW;
Chun-Tsen Lu, Tainan, TW;
Shih-Ming Lin, Taipei, TW;
Lan-Ping Chang, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A manufacturing method of a semiconductor device is provided. The manufacturing method includes the following steps. A plurality of fin structures are formed in a first area and a second area of a substrate. A first density of the fin structures in the first area is lower than a second density of the fin structures in the second area. A gate dielectric layer is formed on the fin structures. An amorphous silicon layer is formed on the gate dielectric layer and the fin structures in the first area and the second area. Part of the amorphous silicon layer which is disposed in the first area is annealed to form a crystalline silicon layer by a laser. The crystalline silicon layer disposed in the first area and the amorphous silicon layer disposed in the second area are polished.