The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Mar. 28, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Akira Shimizu, Nirasaki, JP;

Tsuyoshi Tsunatori, Nirasaki, JP;

Shigeru Nakajima, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/405 (2013.01); C23C 16/45527 (2013.01); C23C 16/45561 (2013.01); H01L 21/02189 (2013.01);
Abstract

A method of forming an oxide film on an object to be processed, includes: supplying a film-forming raw material gas into a processing chamber; performing at least one of exhausting the processing chamber and supplying a purge gas into the processing chamber to remove gas remaining in the processing chamber; supplying an oxidant gas into the processing chamber; and performing at least one of exhausting the processing chamber and supplying the purge gas into the processing chamber to remove gas remaining in the processing chamber, wherein supplying an oxidant gas includes: supplying a first oxidant gas into the processing chamber at a first concentration; and supplying a second oxidant gas into the processing chamber at a second concentration higher than the first concentration.


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