The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Dec. 28, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Chin-Cheng Chien, Tainan, TW;
Hsin-Kuo Hsu, Kaohsiung, TW;
Chih-Chien Liu, Taipei, TW;
Chin-Fu Lin, Tainan, TW;
Chun-Yuan Wu, Yun-Lin County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device with fin-shaped structure is disclosed. The method includes the steps of: forming a fin-shaped structure on a substrate; forming a first dielectric layer on the substrate and the fin-shaped structure; depositing a second dielectric layer on the first dielectric layer; etching back a portion of the second dielectric layer; removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure; forming an epitaxial layer to cover the exposed top surface and part of the sidewall of the fin-shaped structure; and removing a portion of the second dielectric layer.