The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Jun. 13, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ming-Hsi Yeh, Hsinchu, TW;
Hsin-Yan Lu, New Taipei, TW;
Chao-Cheng Chen, Shin-Chu, TW;
Syun-Ming Jang, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor device is disclosed. The method includes exposing a dummy oxide layer of a gate structure to a vapor mixture comprising NHand a fluorine-containing compound at a first temperature, wherein the dummy oxide layer is formed over a substrate and surrounded by a gate spacer that includes a material different from that of the dummy oxide layer. The method further includes rinsing the substrate with a solution containing de-ionized water (DIW) at a second temperature. The method may further include baking the substrate in a chamber heated to a third temperature higher than the first and second temperatures. The exposing, rinsing, and baking steps remove the dummy oxide layer thereby forming an opening in the gate spacer. The method may further include forming a gate stack having a high-k gate dielectric layer and a metal gate electrode in the opening.