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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9461134 B1

PDFFull Text
Date of Patent:
Oct. 04, 2016

Filed:

May. 20, 2015

Method for forming source/drain contact structure with chalcogen passivation

Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Qi Xie, Leuven, BE;

Fu Tang, Gilbert, AZ (US);

Petri Raisanen, Gilbert, AZ (US);

Jacob Woodruff, Scottsdale, AZ (US);

Jan Willem Maes, Wilrijk, BE;

Michael Givens, Scottsdale, AZ (US);

Assignee:

ASM IP HOLDING B.V., , NL;

Attorney:

Knobbe, Martens, Olson & Bear LLP

Primary Examiner:

Kevin M Picardat

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 29/45 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/0228 (2013.01); H01L 21/02186 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 23/29 (2013.01); H01L 23/3171 (2013.01); H01L 29/0847 (2013.01); H01L 29/16 (2013.01); H01L 29/66477 (2013.01);
Abstract

In some embodiments, an MIS-type contact structure is formed by passivating the semiconductor surface of a source/drain region with a chalcogen, and subsequently depositing an tunnel layer by first exposing the chalcogen-passivated surface to a metal-organic precursor. Subsequently, deposition of the tunnel layer continues to a desired thickness. Preferably, the metal-organic precursor is part of a first set of ALD precursors and a second set of ALD precursors, which include one or more metal or semimetal precursors, are subsequently used to continue the deposition. For example, the metal-organic precursor may be used to deposit a first portion of the tunnel layer, and an inorganic metal or inorganic semimetal precursor or a different organic metal or organic semimetal precursor may be used to deposit a second portion of the tunnel layer. A metal is subsequently deposited on the tunnel layer, e.g., to form a metal electrode or electrical contact.

Find Patent Forward Citations

Xie, Qi. (2016). Method for forming source/drain contact structure with chalcogen passivation (U.S. Patent No. 9461134). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9461134

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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