The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Jun. 26, 2015
Icemos Technology Ltd., Belfast, GB;
Takeshi Ishiguro, Fukushima-ken, JP;
Samuel Anderson, Tempe, AZ (US);
Icemos Technology, Ltd., Belfast, GB;
Abstract
A method of forming a superjunction device includes providing a semiconductor layer having first and second opposing main surfaces and a first doping concentration of a dopant of a first conductivity type, forming at least one device proximate the first main surface, forming at least one trench adjacent to the device and extending into the semiconductor layer from the first main surface, doping at least a portion of a sidewall of the trench with a dopant of a second, different conductivity type to form a first region in the semiconductor layer adjacent to the sidewall and extending at least partially between the first and second main surfaces, providing a substrate with a first dielectric layer arranged thereon, bonding the first dielectric layer to the first main surface to cover the trench and at least a portion of the device, and removing the substrate.