The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Aug. 14, 2015
Applicant:
Napra Co., Ltd., Tokyo, JP;
Inventors:
Shigenobu Sekine, Tokyo, JP;
Yurina Sekine, Tokyo, JP;
Assignee:
NAPRA CO., LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 21/02109 (2013.01); H01L 21/02225 (2013.01); H01L 21/02227 (2013.01); H01L 21/02269 (2013.01); H01L 21/28 (2013.01); H01L 21/768 (2013.01); H01L 21/76838 (2013.01); H01L 2224/16 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1461 (2013.01);
Abstract
A semiconductor substrate includes a vertical conductor and an insulating layer. The vertical conductor includes a metal/alloy component of a nanocomposite crystal structure and is filled in a vertical hole formed in the semiconductor substrate along its thickness direction. The insulating layer is formed around the vertical conductor in a ring shape and includes nm-sized silica particles and a nanocrystal or nanoamorphous silica filling up a space between the silica particles to provide a nanocomposite structure along with the silica particles.