The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Aug. 05, 2014
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Thomas R. Omstead, Gloucester, MA (US);

Tristan Ma, Lexington, MA (US);

Ludovic Godet, Sunnyvale, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/768 (2006.01); H01J 37/32 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76892 (2013.01); H01J 37/32366 (2013.01); H01J 37/32422 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H01J 2237/3341 (2013.01);
Abstract

In one embodiment, a method for etching a copper layer disposed on a substrate includes directing reactive ions to the substrate when a mask that defines an exposed area and protected area is disposed on the copper layer, wherein an altered layer is generated in the exposed area comprising a chemically reactive material; and exposing the copper layer to a molecular species that is effective to react with the chemically reactive material so as to remove the altered layer.


Find Patent Forward Citations

Omstead, Thomas. (2016). Techniques and apparatus for anisotropic metal etching (U.S. Patent No. 9460961). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9460961

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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