The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2016

Filed:

Jul. 30, 2015
Applicant:

Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Hubei, CN;

Inventors:

Siping Hu, Hubei, CN;

Jifeng Zhu, Hubei, CN;

Sheng'an Xiao, Hubei, CN;

Jinwen Dong, Hubei, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14687 (2013.01); H01L 27/1469 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01);
Abstract

The invention relates to the field of semiconductor, more particularly, to a preparation process of image sensors, comprising: Step S, providing a semiconductor structure, a top of which is provided with a groove, and leads being formed in said groove, the top of said semiconductor structure and an exposed surface of said groove are covered with a first dielectric layer; Step S: depositing a second dielectric layer covering the upper surface of said first dielectric layer and said leads and filling said groove; Step S: performing a reversed-etching process to thin said second dielectric layer, and to form a convex structure on a surface of said second dielectric layer above the groove; Step S: performing a planarization process to said second dielectric layer to improve surface evenness of said second dielectric layer after grinding by the convex structure.


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