IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9455246 B1

PDFFull Text
Date of Patent:
Sep. 27, 2016

Filed:

Apr. 16, 2015

Fin diode structure

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chang-Tzu Wang, Taoyuan, TW;

Ping-Chen Chang, Pingtung County, TW;

Tien-Hao Tang, Hsinchu, TW;

Kuan-Cheng Su, Taipei, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Cuong Q Nguyen

Assistant Examiner:

Nishath Yasmeen

Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/02 (2006.01); H01L 29/861 (2006.01); H01L 21/76 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 21/22 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 21/22 (2013.01); H01L 21/265 (2013.01); H01L 21/30604 (2013.01); H01L 21/76 (2013.01); H01L 27/0629 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/0692 (2013.01); H01L 29/6609 (2013.01); H01L 29/66136 (2013.01); H01L 29/785 (2013.01); H01L 29/861 (2013.01); H01L 29/1606 (2013.01); H01L 29/2003 (2013.01);
Abstract

A fin diode structure and method of manufacturing the same is provided in present invention, which the structure includes a substrate, a doped well formed in the substrate, a plurality of fins of first conductivity type and a plurality of fins of second conductivity type protruding from the doped well, and a doped region of first conductivity type formed globally in the substrate between the fins of first conductivity type, the fins of second conductivity type, the shallow trench isolation and the doped well and connecting with the fins of first doped type and the fins of second doped type.

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