The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2016

Filed:

Dec. 18, 2015
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Hideaki Kawahara, Plano, TX (US);

Hong Yang, Richardson, TX (US);

Eugen Pompiliu Mindricelu, Dallas, TX (US);

Robert Graham Shaw, Nashua, NH (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 23/525 (2006.01); H01L 27/06 (2006.01); H01L 23/532 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 23/53214 (2013.01); H01L 23/53257 (2013.01); H01L 23/53271 (2013.01); H01L 27/0629 (2013.01); H01L 27/0647 (2013.01); H03F 3/45071 (2013.01); H03F 2203/45041 (2013.01); H03F 2203/45538 (2013.01);
Abstract

A fuse circuit includes a substrate, a top semiconductor layer doped a first conductivity type having a well doped a second conductivity type formed therein including a well contact. A field dielectric layer (FOX) is on the semiconductor layer. A fuse is on the FOX within the well including a fuse body including electrically conductive material having a first and second fuse contact. A transistor is formed in the semiconductor layer including a control terminal (CT) with CT contact, a first terminal (FT) with FT contact, and a second terminal (ST) with a ST contact. A coupling path is between the CT contact and well contact, a first resistor is coupled between the FT contact and CT contact, and a coupling path is between the ST contact and the first fuse contact.


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Kawahara, Hideaki. (2016). Ic having failsafe fuse on field dielectric (U.S. Patent No. 9455222). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9455222

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