The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

Dec. 01, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Kuo-Chiang TIng, Hsin-Chu, TW;

Jyh-Huei Chen, Hsin-Chu, TW;

Wen-Huei Guo, Chu-bei, TW;

Cheng-Han Wu, Hsin-Chu, TW;

Yu-Wei Lee, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01); H01L 51/00 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 29/0653 (2013.01); H01L 29/6656 (2013.01); H01L 29/6681 (2013.01);
Abstract

An embodiment is a method including forming a first fin on a substrate, the first fin having a first longitudinal axis, forming a first trench having a first width in the first fin, the first trench dividing the first fin into at least two fin portions, forming a first gate structure and first source/drain regions over one of the at least two fin portions of the first fin, and forming a second gate structure and second source/drain regions over another of the at least two fin portions of the first fin.


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