The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

Dec. 15, 2015
Applicant:

D2s, Inc., San Jose, CA (US);

Inventors:

Akira Fujimura, Saratoga, CA (US);

Michael Tucker, Los Altos, CA (US);

Assignee:

D2S, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/70 (2012.01); G03F 1/78 (2012.01); G03F 7/20 (2006.01); G06F 17/50 (2006.01); H01J 37/317 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01J 37/302 (2006.01);
U.S. Cl.
CPC ...
G03F 1/78 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 1/70 (2013.01); G03F 7/2061 (2013.01); G06F 17/5045 (2013.01); G06F 17/5081 (2013.01); H01J 37/3026 (2013.01); H01J 37/3174 (2013.01); Y10S 430/143 (2013.01);
Abstract

In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, where a non-circular target pattern to be formed on a surface is input. A plurality of charged particle beam shots for a multi-beam charged particle beam system is determined, where the plurality of shots will form a pattern on the surface, each charged particle beam shot being a multi-beam shot comprising a plurality of circular or nearly-circular beamlets. The pattern on the surface matches the target pattern within a predetermined tolerance. The determining is performed using a computing hardware device.


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