The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Oct. 03, 2014
United Microelectronics Corp., Hsinchu, TW;
Chun-Tsen Lu, Tainan, TW;
Chih-Jung Su, Tainan, TW;
Jian-Wei Chen, Kaohsiung, TW;
Shui-Yen Lu, Tainan, TW;
Yi-Wen Chen, Tainan, TW;
Po-Cheng Huang, Kaohsiung, TW;
Chen-Ming Huang, Taipei, TW;
Shih-Fang Tzou, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed.