The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Oct. 22, 2015
Applicant:

Transphorm Inc., Goleta, CA (US);

Inventors:

Yifeng Wu, Goleta, CA (US);

Umesh Mishra, Montecito, CA (US);

Srabanti Chowdhury, Goleta, CA (US);

Assignee:

Transphorm Inc., Goleta, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/088 (2006.01); H01L 29/778 (2006.01); H01L 27/06 (2006.01); H01L 29/20 (2006.01); H01L 29/16 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0883 (2013.01); H01L 27/0605 (2013.01); H01L 29/16 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H03K 17/687 (2013.01);
Abstract

An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, and a gate electrode of the high-voltage depletion-mode transistor is electrically coupled to the source electrode of the low-voltage enhancement-mode transistor. The on-resistance of the enhancement-mode transistor is less than the on-resistance of the depletion-mode transistor, and the maximum current level of the enhancement-mode transistor is smaller than the maximum current level of the depletion-mode transistor.


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