The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Aug. 07, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/808 (2006.01); H01L 21/337 (2006.01); H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 21/331 (2006.01); H01L 29/73 (2006.01); H01L 21/768 (2006.01); H01L 29/06 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/768 (2013.01); H01L 27/067 (2013.01); H01L 27/0635 (2013.01); H01L 27/0814 (2013.01); H01L 29/0615 (2013.01); H01L 29/0634 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 29/0878 (2013.01); H01L 29/1083 (2013.01); H01L 29/1087 (2013.01); H01L 29/42368 (2013.01);
Abstract
A semiconductor device includes a substrate, a high-voltage N-well (HVNW) disposed in the substrate, a bulk P-well disposed in the substrate and adjacent to an edge of the HVNW, a high-voltage (HV) diode disposed in the HVNW, the HV diode including a HV diode P-well disposed in the HVNW and spaced apart from the edge of the HVNW, and an N-well disposed in the HVNW and between the HV diode P-well and the bulk P-well. A doping concentration of the N-well is higher than a doping concentration of the HVNW.