The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Jun. 24, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Po-Wen Su, Kaohsiung, TW;
Zhi-Jian Wang, Tainan, TW;
Cheng-Chang Wu, New Taipei, TW;
Hsin-Yu Hsieh, Tainan, TW;
Shui-Yen Lu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An etching method includes forming a high density structure and a low density structure on a substrate. A first material layer is formed to cover both structures. Part of the low density structure is exposed through the first material layer. A second material layer is formed to cover the first material layer. The second material layer is etched to remove the second material layer on the high density structure and part of the second material layer on the low density structure. The first material layer on the high density structure and the second material layer on the low density structure are simultaneously etched. The first material layer is etched to expose a first portion of the high density structure and a second portion of the low density structure. Finally, the first portion and the second portion are removed.